Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures
Finna-arvio
Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures
energies_14_06654_v2.pdf
(Tampereen yliopisto - Trepo)
Tallennettuna:
Ulkoasu |
2855933 |
---|---|
Kieli |
englanti |
Aiheet |
213 Electronic, automation and communications engineering, electronics
213 Electronic, automation and communications engineering, electronicsHae aiheistaHae kaikista tiedoista |
Kuuluu kokonaisuuteen |