Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
Finna-arvio
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
IEEE_TNS_Ion-Induced%20Energy%20Pulse.pdf
(Jyväskylän yliopisto - JYX)
Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highlylocalized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and singleevent burnout for both the MOSFETs and JBS diodes.
Tallennettuna:
Kieli |
englanti |
---|---|
Sarja | IEEE Transactions on Nuclear Science, 1 |
Aiheet | |
ISSN |
0018-9499 |