Single-Event Burnout Mechanisms in SiC Power MOSFETs
Finna-arvio
Single-Event Burnout Mechanisms in SiC Power MOSFETs
witulskiym08392402.pdf
(Jyväskylän yliopisto - JYX)
Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB.
Tallennettuna:
Kieli |
englanti |
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Sarja | IEEE Transactions on Nuclear Science, 8 |
Aiheet | |
ISSN |
0018-9499 |