Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/Si1-xGex/SiO2/(100)Si structures with nm-thi
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Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/Si1-xGex/SiO2/(100)Si structures with nm-thi
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| Language |
English |
|---|---|
| Series | APPLIED SURFACE SCIENCE |
| Subjects | |
| ISSN |
0169-4332 1873-5584 |
| DOI | 10.1016/j.apsusc.2013.09.025 |