Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/Si1-xGex/SiO2/(100)Si structures with nm-thi
Finna-arvio
Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/Si1-xGex/SiO2/(100)Si structures with nm-thi
Tallennettuna:
| Kieli |
englanti |
|---|---|
| Sarja | APPLIED SURFACE SCIENCE |
| Aiheet | |
| ISSN |
0169-4332 1873-5584 |
| DOI | 10.1016/j.apsusc.2013.09.025 |